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부품번호 | 2SJ567 기능 |
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기능 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 7 페이지수
2SJ567
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
Industrial Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
· High forward transfer admittance: |Yfs| = 2.0 S (typ.)
· Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)
· Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
-200
-200
±20
-2.5
-10
20
97.5
-2.5
2.0
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = -50 V, Tch = 25°C (initial), L = -25.2 mH, IAR = -2.5 A
RG = 25 W,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2002-08-12
RDS (ON) – Tc
6
Common source
VGS = -10 V
5 Pulse test
ID = -1.5 A
-1.2
4
3
-1.0
2
1
0
-80 -40
0
40 80 120 160
Case temperature Tc (°C)
-10
Common source
Tc = 25°C
Pulse test
IDR – VDS
-1
2SJ567
-0.1
0
-5
0.2
-3
0.4
-1 VGS = 0 V
0.6 0.8
Drain-source voltage VDS (V)
1
Capacitance – VDS
1000
Ciss
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
-0.1
-1
-10
Drain-source voltage VDS (V)
Crss
-100
Vth – Tc
5
Common source
4 VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
-80 -40
0
40 80 120 160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0 40 80 120 160
Case temperature Tc (°C)
Dynamic input/output characteristics
VDS
-160
-120
-80
-40
VDS = -40 V
-180
VGS
-80
-16
-12
Common source
ID = -2.5 A
Tc = 25°C
Pulse test
-8
-4
0
0 4 8 12 16 20
Total gate charge Qg (nC)
4 2002-08-12
4페이지 This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |