(PDF) 2SJ574 Datasheet - Silicon P Channel MOS FET High Speed Switching

Número de pieza	2SJ574
Descripción	Silicon P Channel MOS FET High Speed Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ574 Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA) RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 D 3 2 G 1 S ADE-208-739B (Z) 3rd.Edition. June 1999 1 2 1. Source 2. Gate 3. Drain 1 page 2SJ574 Typical Capacitance vs. Drain to Source Voltage 100 VGS = 0 50 f = 1 MHz Ciss 20 Coss 10 Crss 5 2 1 0 -10 -20 -30 -40 -50 Drain to Source Voltage VDS (V) 1000 500 200 100 t f 50 20 10 5 2 1 -0.1 Switching Characteristics t d(off) tr t d(on) VGS = -4 V, VDD = -10 V PW = 5 µs, duty < 1 % -0.2 -0.5 -1.0 Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage -0.5 VGS = 0,5V -0.4 -5 V -0.3 -10 V -0.2 -0.1 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) 5 5 Page

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PDF 2SJ574 Data sheet ( Hoja de datos )