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Número de pieza | 2SJ575 | |
Descripción | Silicon P Channel MOS FET High Speed Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SJ575 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 2SJ575
Silicon P Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
D
3
2
G
1
S
ADE-208-740B (Z)
3rd.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
1 page 2SJ575
Typical Capacitance
vs. Drain to Source Voltage
100
VGS = 0
50 f = 1 MHz
20 Ciss
Coss
10
5
Crss
2
1
0 -10 -20 -30 -40 -50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
200
100 t f
50
t d(off)
20
10
tr
t d(on)
5
2
1
-0.01
VGS = -4 V, VDD = -10 V
PW = 5 µs, duty < 1 %
-0.02
-0.05
-0.1
Drain Current I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
-0.5
-0.4
VGS = 0,5 V
-0.3
-5 V
-0.2
-10 V
-0.1
Pulse Test
0 -0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage VSD (V)
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SJ575.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SJ574 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
2SJ575 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
2SJ576 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
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