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PDF 2SJ587 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ587 | |
| Descripción | Silicon P Channel MOS FET High Speed Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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2SJ587
Silicon P Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
• 2.5 V gate drive device.
• Small package (SMPAK)
Outline
ADE-208-801 (Z)
1st.Edition.
June 1999
SMPAK
D
3
2
G
1
S
3
1
2
1. Source
2. Gate
3. Drain
1 page  
2SJ587
Typical capacitance vs.
Drain to Source Voltage
100
VGS=0
50 f=1MHz
20
Ciss
10
Coss
5
2 Crss
1
0 -4 -8 -12 -16 -20
Drain to Source Voltage VDS (V)
1000
500
200
100
50
20
10
5
2
1
-0.01
Switching Characteristics
tr
t d(on)
tf
t d(off)
VGS = -4 V, VDD = -10 V
PW = 5 µs, duty < 1 %
-0.02
-0.05
Drain Current I D (A)
-0.1
-0.2
-0.16
-0.12
Reverse Drain Current vs.
Source to Drain Voltage
VGS = 0,5V
-5 V
-10 V
-0.08
-0.04
Pulse Test
0 -0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage VSD (V)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ587.PDF ] | |
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