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PDF 2SJ619 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ619 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SJ619
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-F-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· 4-V gate drive
· Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.)
· High forward transfer admittance: ïYfsï = 7.7 S (typ.)
· Low leakage current: IDSS = -100 µA (max) (VDS = -100 V)
· Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
-100
-100
±20
-16
-64
75
292
-16
7.5
150
-55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
4
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.67 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = -25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 W,
IAR = -16 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2002-08-09
1 page  
2SJ619
rth - tw
10
3
1
Duty = 0.5
0.3
0.1
0.03
0.2
0.1
0.05
0.02
0.01
Single pulse
0.01
10 m
100 m
1m
10 m
100 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.67°C/W
1
10
Pulse width tw (S)
-1000
Safe operating area
-100 ID max (pulsed) *
100 ms *
ID max (continuous)
-10
1 ms *
DC operation
Tc = 25°C
-1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.1
-0.1
-1
VDSS max
-10 -100
Drain-source voltage VDS (V)
-1000
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = -25 V, L = 1.84 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-08-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ619.PDF ] | |
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