(PDF) 2SK1151 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1151
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 2A 8 4 1A ID = 0.5 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 10 ID = 2 A 8 VGS = 10 V Pulse Test 6 1A 0.5 A 4 2 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1151(L)(S), 2SK1152(L)(S) Static Drain to Source on State Resistance vs. Drain Current 100 50 Pulse Test 20 VGS = 10 V 10 5 15 V 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 Forward Transfer Admittance vs. Drain Current 5 VDS = 20 V 2 Pulse Test –25°C 1.0 TC = 25°C 0.5 75°C 0.2 0.1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK1151.PDF ]

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PDF 2SK1151 Data sheet ( Hoja de datos )