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Número de pieza | 2SK1151S | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1151S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
2A
8
4 1A
ID = 0.5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 2 A
8
VGS = 10 V
Pulse Test
6
1A
0.5 A
4
2
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1151(L)(S), 2SK1152(L)(S)
Static Drain to Source on State
Resistance vs. Drain Current
100
50 Pulse Test
20 VGS = 10 V
10
5 15 V
2
1
0.05
0.1 0.2 0.5 1.0 2
Drain Current ID (A)
5
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
2 Pulse Test –25°C
1.0
TC = 25°C
0.5 75°C
0.2
0.1
0.05
0.1 0.2 0.5 1.0 2
Drain Current ID (A)
5
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1151S.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK1151 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1151L | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1151S | Silicon N-Channel MOS FET | Hitachi Semiconductor |
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