(PDF) 2SK1159 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1159
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 10 A 6 4 5A 2 ID = 2 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 2.0 VGS = 10 V Pulse Test 1.6 1.2 ID = 10 A 0.8 2, 5 A 0.4 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1159, 2SK1160 Static Drain to Source on State Resistance vs. Drain Current 10 5 Pulse Test 2 VGS = 10 V 1.0 15 V 0.5 0.2 0.1 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 50 VDS = 20 V Pulse Test 20 10 –25°C TC = 25°C 75°C 5 2 1.0 0.5 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK1159.PDF ]

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PDF 2SK1159 Data sheet ( Hoja de datos )