|
|
PDF 2SK117 Data sheet ( Hoja de datos )
| Número de pieza | 2SK117 | |
| Descripción | N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK117 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
2SK117
Low Noise Audio Amplifier Applications
Unit: mm
• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−50
10
300
125
−55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
⎪Yfs⎪
Ciss
Crss
NF (1)
NF (2)
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = −10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
⎯ ⎯ −1.0 nA
−50 ⎯
⎯
V
1.2 ⎯ 14 mA
−0.2 ⎯ −1.5 V
4.0 15 ⎯ mS
⎯ 13 ⎯ pF
⎯ 3 ⎯ pF
⎯ 5 10
dB
⎯1
2
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK117.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK11 | (2SK11x) N-CHANNEL JFET TRANSISTOR |  Toshiba |
| 2SK1101-01MR | N-CHANNEL SILICON POWER MOS-FET |  Fuji Electric |
| 2SK1102-01M | N-CHANNEL SILICON POWER MOS-FET |  ETC |
| 2SK1102-01MR | N-CHANNEL SILICON POWER MOS-FET | ETC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |