|
|
PDF 2SK118 Data sheet ( Hoja de datos )
| Número de pieza | 2SK118 | |
| Descripción | N-CHANNEL JUNCTION TYPE Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK118 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK118
Unit: mm
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−50
10
100
125
−55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF) VDS = 10 V, ID = 0.1 μA
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VGD = −10 V, ID = 0, f = 1 MHz
NF
VDS = 15 V, VGS = 0, RG = 100 kΩ,
f = 120 Hz
⎯ ⎯ −1.0 nA
−50 ⎯
⎯
V
0.3 ⎯ 6.5 mA
−0.4 ⎯ −5.0 V
1.2 ⎯
⎯ mS
⎯ 8.2 ⎯ pF
⎯ 2.6 ⎯ pF
⎯ 0.5 5.0 dB
Note: IDSS classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK118.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK11 | (2SK11x) N-CHANNEL JFET TRANSISTOR |  Toshiba |
| 2SK1101-01MR | N-CHANNEL SILICON POWER MOS-FET |  Fuji Electric |
| 2SK1102-01M | N-CHANNEL SILICON POWER MOS-FET |  ETC |
| 2SK1102-01MR | N-CHANNEL SILICON POWER MOS-FET | ETC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |