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Número de pieza | 2SK1228 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1228 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Silicon MOS FETs (Small Signal)
2SK1228
Silicon N-Channel MOS FET
For switching
s Features
q High-speed switching
q Wide frequency band
q Incorporating a built-in gate protection-diode
q Allowing 2.5V drive
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
50
10
50
100
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: 4V
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
IDSS
IGSS
VDSS
Vth
RDS(on)*1
| Yfs |
VDS = 20V, VGS = 0
VGS = 10V, VDS = 0
ID = 10µA, VGS = 0
ID = 100µA, VDS = 5V
ID = 10mA, VGS = 2.5V
ID = 10mA, VDS = 5V, f = 1kHz
1 µA
1 µA
50 100
V
0.5 0.8 1.1
V
27 50 Ω
20 39
mS
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Crss
ton*2
toff*2
*1 Pulse measurement
*2 ton, toff measurement circuit
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω
VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω
4.5
4.1
1.2
0.2
0.2
pF
pF
pF
µs
µs
VGS = 2.5V
50Ω
Vout 470Ω
VDD = 5V
Vin
Vout
10%
90%
10%
90%
ton toff
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SK1228.PDF ] |
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