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PDF 2SK2479 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2479 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2479
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 485 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 900 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±3.0
A
Drain Current (pulse)*
ID(pulse) ±8.0
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 3.0 A
Single Avalanche Energy**
EAS 5.4 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10271EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
0 ID = 2 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
Coss
10
1.0
1.0
Crss
10 100
VDS - Drain to Source Voltage - V
1 000
2SK2479
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
0
1 000
VGS = 10 V
VGS = 0 V
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
tr
td(off)
tf
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800 16
ID = 3 A
14
600
VDD = 450 V
300 V
150 V
400
VGS 12
10
8
6
200 4
2
VDS
0
0 6 12 18 27
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2479.PDF ] | |
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