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PDF 2SK2941 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2941 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
FEATURE
• Low On-Resistance
RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)
RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)
• Low Ciss
Ciss = 1250 pF Typ.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Maximum Voltages and Currents
Drain to Source Voltage
VDSS
30
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
ID(DC)
±35
Drain Current (Pulse)*
ID(Pulse)
±140
Maximum Power Dissipation
Total Power Dissipation (TA = 25 ˚C) PT
1.5
Total Power Dissipation (TC = 25 ˚C) PT
60
Maximum Temperature
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 125
V
V
A
A
W
W
˚C
˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1%
PACKAGE DIMENSIONS
inmillimeters
10.6 MAX.
3.6±0.2
10.0
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.5±0.2
0.75±0.1
2.54
2.8±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Gate
Drain
Dody
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
The information in this document is subject to change without notice.
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
© 1997
1 page  
1000
100
SWITCHING CHARACTERISTICS
tr
tf
t d(off)
t d(on)
10
1
0.1
1 10
ID - Drain Current - A
VDD = 15 V
VGS =10 V
Rin =10 Ω
100
DRAIN TO SOURCE ON-RESISTANCE vs.
CHANNEL TEMPERATURE
ID = 18 A
Pulsed
100
80
60
40 VGS = 4 V
20 VGS = 10 V
0 –50 0 50 100 150
Tch - Channel Temperature - °C
1000
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0
10
1
0.1 1 10
I D - Drain Current - A
100
2SK2941
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS = 4V
VGS = 0V
10
1.0
0.1
0 0.4 0.8 1.2 1.6 2.0 2.4
VSD - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
30
VDD = 24 V
15 V
6V
20
16
ID = 35 A
14
VGS 12
10
8
6
10 4
2
VDS
0
0 20 40 60 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2941.PDF ] | |
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