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PDF 2SK2985 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2985 | |
| Descripción | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK2985
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2985
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 70 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
l Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
45
180
45
701
45
4.5
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
2.78
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-07-31
1 page  
2SK2985
RG = 25 Ω
VDD = 25 V, L = 471 µH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-07-31
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2985.PDF ] | |
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