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PDF 2SK2987 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2987 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK2987
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2987
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 80 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
l Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
70
280
150
490
70
15
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 136 µH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-06-27
1 page  
2SK2987
RG = 25 Ω
VDD = 25 V, L = 136 µH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-06-27
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2987.PDF ] | |
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