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Datasheet 2SK364 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SK364 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK364
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK364
Unit: mm
· High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON) | Toshiba Semiconductor | transistor |
2 | 2SK3640 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as | NEC | mosfet |
3 | 2SK3640 | MOS Field Effect Transistor SMD Type
Transistors IC
100V N-Channel PowerTrench MOSFET KDD3670
TO-252
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V
+0.2 9.70-0.2
Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS( | Kexin | transistor |
4 | 2SK3641 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3641
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as | NEC | mosfet |
5 | 2SK3641 | MOS Field Effect Transistor SMD Type
IC MOSFET
MOS Field Effect Transistor 2SK3641
TO-252
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2
Features
Low on-state resistance RDS(on)1 =14 m RDS(on)2 =25 m MAX. (VGS = 10 V, ID = 18A)
+0.2 9.70-0.2
+0.15 1.50-0.15
+0.1 0.80-0.1
2.3
+0.15 4.60-0.15
+0.1 0.60 | Kexin | transistor |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu Panasonic Semiconductor mosfet | | |
2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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