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Datasheet 2SK367 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SK367 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK367
For Audio, High Voltage Amplifier and Constant Current Applications
2SK367
Unit: mm
• High breakdown voltage: VGDS = −100 V (min) • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) • Small package
Absolute |  Toshiba Semiconductor | transistor |
| 2 | 2SK3670 | Silicon N-Channel MOS Type Chopper Regulator and DC-DC Converter Applications 2SK3670
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670
Chopper Regulator and DC−DC Converter Applications
z 2.5V-Gate Drive z Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.) z Low leakage current: I | Toshiba Semiconductor | converter |
| 3 | 2SK3673-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3673-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) www.Da |  Fuji Electric | mosfet |
| 4 | 2SK3674 | Power MOSFET SuperFAP-G series Target Specification 2SK3674-01L,S,SJ (900V/2.0Ω/7A)
1) Package
T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4
PRELIMINARY
2) Absolute Maximum Ratings (Tc=25• Ž • @
Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataShee | Fuji Electric | mosfet |
| 5 | 2SK3674-01JS | Power MOSFET SuperFAP-G series Target Specification 2SK3674-01L,S,SJ (900V/2.0Ω/7A)
1) Package
T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4
PRELIMINARY
2) Absolute Maximum Ratings (Tc=25• Ž • @
Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataShee | Fuji Electric | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu  Panasonic Semiconductor mosfet | | |
| 2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
| 3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
| 4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
| 5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
| 6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
| 7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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