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PDF 2SK3683 Data sheet ( Hoja de datos )

Número de pieza 2SK3683
Descripción Fuji Power MOSFET SuperFAP-G series Target Specification
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 2SK3683 Hoja de datos, Descripción, Manual

PRELIM INARY
2SK3683-01MR (500V/0.38/19A)
1) Package
TO-220F15R
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
VDS
ID
ID (puls e)
VGS
IAR
EAS
dVDS/dt
dV/dt
500
±19
±76
±30
19
245.3
20
5
Maximum Power Dissipation
Operating and Storage
Temperature range
PD c=25
PD @Ta=25
Tch
Ts t g
95
2.16
150
-55 +150
Units
V
A
A
V
A
mJ
kV/us
kV/us
W
W
*1
*2
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
ID=250uA
VGS=0V
Gate Threshold Voltage
VGS(th)
ID=250uA
VDS=VGS
Zero Gate Voltage Drain Current
ID SS
VDS=500V
VGS=0V
Tch=25
Tch=125
Gate-Source Leakage Current
IGSS
VGS=±30V
VDS=0V
Drain-Source On-State Resistance RDS(on) ID=9.5A
VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
Ciss
Cos s
Crss
Qg
Qgs
Qgd
IAV
VSD
VDS=25V
VGS=0V
f=1MHz
Vcc=250V
ID=19A
VGS=10V
L=1.25mH
Tch=25
IF=19A,VGS=0V,Tch=25
min.
500
3.0
---
---
---
---
---
---
---
---
---
---
19
---
typ.
---
---
---
---
---
---
1580
240
12
32
16
12
---
1.0
max.
---
5.0
25
250
100
0.38
2370
360
18
48
24
18
---
1.5
Units
V
V
A
A
A
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ. max. Units
1.316
/W
58.0
/W
*1 L=1.25mH,Vcc=50V
FD
µ
DSS
≤°
DRAWN
CHECKED
REVISIONS
MA4LE
DATE
NAME APPROVED
Fuji Electric Co.,Ltd.

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