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PDF 2SK663 Data sheet ( Hoja de datos )
| Número de pieza | 2SK663 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK663
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
s Features
q Low noise-figure (NF)
q High gate to drain voltage VGDO
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
55
−55
−55
30
10
150
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
IDSS*
IGSS
VGDS
VGSC
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = 100µA, VDS = 0
VDS = 10V, ID = 10µA
1 12 mA
−10 nA
55 80
V
−5 V
Mutual conductance
gm VDS = 10V, ID = 5mA, f = 1kHz
2.5 7.5
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VGS = 0, f = 1MHz
6.5 pF
1.9 pF
Noise figure
VDS = 10V, VGS = 0, Rg = 100kΩ
NF 2.5 dB
f = 100Hz
* IDSS rank classification
Runk
P
IDSS (mA)
Marking Symbol
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK663.PDF ] | |
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