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PDF 2SK879 Data sheet ( Hoja de datos )
| Número de pieza | 2SK879 | |
| Descripción | Silicon N Channel Junction Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK879
Unit: mm
· High breakdown voltage: VGDS = −50 V
· High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
· Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-50
10
100
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss VGD = -10 V, ID = 0, f = 1 MHz
NF VDS = 15 V, VGS = 0
RG = 100 kW, f = 120 Hz
¾ ¾ -1.0 nA
-50 ¾
¾
V
0.3 ¾ 6.5 mA
-0.4
¾ -5.0
V
1.2 ¾ ¾ mS
¾ 8.2 ¾ pF
¾ 2.6 ¾ pF
¾ 0.5 ¾ dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1 2003-03-27
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK879.PDF ] | |
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