(PDF) 2SK975 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK975
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D 321 1. Source G 2. Drain 3. Gate S 1 page 1000 500 200 100 50 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 20 10 0.05 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 Dynamic Input Characteristics 100 80 VDD = 50 V 25 V 60 VDS 10 V 40 VDD = 50 V VGS 20 16 12 8 20 4 25 V ID = 1.5 A 10 V 0 0 2 4 6 8 10 Gate Charge Qg (nc) 2SK975 1000 300 100 30 10 Typical Capacitance vs. Drain to Source Voltage Ciss Coss VGS = 0 f = 1 MHz Crss 3 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 100 td (off) 50 tf 20 VGS = 10 V VDD =• • 30 V PW = 2 µs, duty < 1 % 10 tr 5 td (on) 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 5 5 Page

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PDF 2SK975 Data sheet ( Hoja de datos )