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39SF020 데이터시트 PDF




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부품번호 39SF020 기능
기능 2 Megabit (256K x 8) Multi-Purpose Flash
제조업체 Silicon Storage Technology Inc
로고 Silicon Storage Technology  Inc 로고


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39SF020 데이터시트, 핀배열, 회로
2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020
Preliminary Specifications
FEATURES:
• Organized as 256 K X 8
• Single 5.0V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 20 mA (typical)
– Standby Current: 10 µA (typical)
• Sector Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Byte Program:
– Sector Erase Time: 7 ms (typical)
– Chip Erase Time: 15 ms (typical)
– Byte Program time: 20 µs (typical)
– Chip Rewrite Time: 5 seconds (typical)
• Automatic Write Timing
- Internal Vpp Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
– EEPROM Pinouts and command set
• Packages Available
– 32-Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST39SF020 is a 256K x 8 CMOS Multi-Purpose
Flash (MPF) manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split
gate cell design and thick oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches. The SST39SF020 device writes
(Program or Erase) with a 5.0V-only power supply. The
SST39SF020 device conforms to JEDEC standard
pinouts for x8 memories.
Featuring high performance byte program, the
SST39SF020 device provides a maximum byte-pro-
gram time of 30 µsec. The entire memory can be erased
and programmed byte by byte typically in 5 seconds,
when using interface features such as Toggle Bit or
Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, the
SST39SF020 device has on-chip hardware and soft-
ware data protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST39SF020 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST39SF020 device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applica-
tions, the SST39SF020 device significantly improves
performance and reliability, while lowering power
consumption. The SST39SF020 inherently uses less
energy during erase and program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash tech-
nology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase
or Program operation is less than alternative flash tech-
nologies. The SST39SF020 device also improves flex-
ibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of endurance
cycles that have occurred. Therefore the system soft-
ware or hardware does not have to be modified or de-
rated as is necessary with alternative flash technologies,
whose erase and program times increase with accumu-
lated endurance cycles.
To meet high density, surface mount requirements, the
SST39SF020 device is offered in 32-pin TSOP and 32-
pin PLCC packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
A command is written by asserting WE# low while
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.
326-10 12/98
1 These specifications are subject to change without notice.




39SF020 pdf, 반도체, 판매, 대치품
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
A11
A9
A8
A13
A14
A17
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Standard Pinout
Top View
Die Up
FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN TSOP PACKAGES (8mm x 14mm)
32 OE#
31 A10
30 CE#
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 VSS
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
326 ILL F01.0
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6 32-Pin
7 PDIP
8 Top View
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
4 3 2 1 32 31 30
5 29
6 28
7 27
8
26
32-Lead PLCC
9 25
10
Top View
24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
326 ILL F02.0
FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN PDIPS AND 32-LEAD PLCCS
© 1998 Silicon Storage Technology, Inc.
4
326-10 12/98

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39SF020 전자부품, 판매, 대치품
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device
at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied.
Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias ................................................................................................................. -55°C to +125°C
Storage Temperature ...................................................................................................................... -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................................................................. -0.5V to VCC+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ......................................................... -1.0V to VCC+ 1.0V
Voltage on A9 Pin to Ground Potential ................................................................................................ -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) .............................................................................. 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
Output Short Circuit Current(1) ............................................................................................................................................................... 100 mA
Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time.
1
2
3
4
5
OPERATING RANGE
Range
Ambient Temp
Commercial 0 °C to +70 °C
Industrial
-40 °C to +85 °C
VCC
5V±10%
5V±10%
AC CONDITIONS OF TEST
Input Rise/Fall Time ......... 10 ns
Output Load ..................... CL = 100 pF for 90 ns
Output Load ..................... CL = 30 pF for 70 ns
See Figures 12 and 13
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15
16
© 1998 Silicon Storage Technology, Inc.
7
326-10 12/98

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부품번호상세설명 및 기능제조사
39SF020

2 Megabit (256K x 8) Multi-Purpose Flash

Silicon Storage Technology  Inc
Silicon Storage Technology Inc

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