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PDF 3N170 Data sheet ( Hoja de datos )
| Número de pieza | 3N170 | |
| Descripción | N-CHANNEL MOSFET ENHANCEMENT MODE | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
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Linear Integrated Systems
3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
rds(on) ≤ 200Ω
td(on) ≤ 3.0ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Current
Drain to Source
30mA
Maximum Voltages
Drain to Gate
±35V
Drain to Source
25V
Gate to Source
±35V
TO-72
BOTTOM VIEW
G 2 3D
S 1 4C
* Body tied to Case.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
VDS(on)
VGS(th)
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source
Threshold Voltage
3N170
3N171
25
1.0
1.5
ID = 10µA, VGS = 0V
2.0 V ID = 10mA, VGS = 10V
2.0
2.0
VDS = 10V, ID = 10µA
IGSS
IDSS
ID(on)
gfs
rds(on)
Crss
Ciss
Cdb
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
10 pA VGS = -35V, VDS = 0V
10 nA VDS = 10V, VGS = 0V
mA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2.0mA, f = 1.0kHz
200 Ω VGS = 10V, ID = 0A, f = 1.0kHz
1.3 VDS = 0V, VGS = 0V, f = 1.0MHz
5.0 pF VDS = 10V, VGS = 0V, f = 1.0MHz
5.0 VDB = 10V, f = 1.0MHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3N170.PDF ] | |
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