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부품번호 | 3N246 기능 |
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기능 | GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 2 페이지수
KBP005M THRU KBP10M
3N246 THRU 3N252
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
0.125 x 45o
(3.2)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
60
(15.2)
MIN.
0.034 (8.6)
0.028 (7.6)
DIA.
0.200 (5.08)
0.180 (4.57)
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.50
(12.7)
MIN.
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
♦ This series is UL listed under Recognized Component Index,
file number E54214
♦ Glass passivated chip junctions
♦ High surge current capability
♦ Ideal for printed circuit board
♦ High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting position: Any
Weight: 0.06 ounce, 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
KBP KBP
005M 01M
SYMBOLS 3N246 3N247
* Maximum repetitive peak reverse voltage
VRRM 50 100
* Maximum RMS voltage
VRMS 35 70
* Maximum DC blocking voltage
VDC 50 100
Maximum average forward output rectified current at TA=40°C
I(AV)
* Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method)
TJ=150°C IFSM
Rating for fusing (t < 8.3ms)
I2t
* Maximum instantaneous forward voltage drop at 1.0A per leg
1.57A per leg
VF
* Maximum DC reverse current
at rated DC blocking voltage per leg
TA=25°C
TA=125°C
IR
Typical junction capacitance per leg (NOTE 1)
CJ
Typical thermal resistance per leg (NOTE 2)
RΘJA
RΘJL
* Operating junction and storage temperature range
TJ, TSTG
KBP KBP KBP KBP KBP
02M 04M 06M 08M 10M
3N248 3N249 3N250 3N251 3N252 UNITS
200 400 600 800 1000 Volts
140 280 420 560 700 Volts
200 400 600 800 1000 Volts
1.5 Amps
50.0
30.0 Amps
10.0
A2sec
1.0
1.3 Volts
5.0
500.0
µA
15.0 pF
40.0
13.0 °C/W
-55 to +150
°C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads
* JEDEC registered values
4/98
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구 성 | 총 2 페이지수 | ||
다운로드 | [ 3N246.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
3N246 | GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE | General Semiconductor |
3N246 | Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |