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부품번호 | 3SK166A-2 기능 |
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기능 | GaAs N-channel Dual Gate MES FET | ||
제조업체 | Sony Corporation | ||
로고 | |||
3SK166A
GaAs N-channel Dual Gate MES FET
For the availability of this product, please contact the sales office.
Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
8
• Gate 1 to source voltage
VG1S
–6
• Gate 2 to source voltage
VG2S
–6
• Drain current
ID 80
• Allowable power dissipation PD
150
• Channel temperature
Tch 150
• Storage temperature
Tstg –55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y11-PS
3SK166A
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG
ANG
0.996
0.988
0.969
0.948
0.927
0.899
0.873
0.845
0.816
0.785
0.754
0.723
0.694
0.669
0.643
0.621
0.601
0.583
0.565
0.545
–5.0
–9.8
–14.8
–19.8
–24.6
–29.3
–33.5
–37.5
–41.2
–44.5
–47.6
–50.3
–53.2
–55.6
–58.1
–60.4
–62.3
–64.5
–66.6
–68.1
S21
MAG
ANG
3.807
3.783
3.726
3.670
3.602
3.507
3.414
3.333
3.244
3.146
3.061
2.965
2.874
2.800
2.709
2.636
2.545
2.464
2.364
2.283
172.8
165.5
158.4
151.5
144.5
137.9
131.4
125.2
118.9
112.8
106.9
101.2
95.4
90.0
84.2
78.5
72.8
67.0
61.3
55.8
S12
MAG
ANG
0.002
0.005
0.007
0.009
0.010
0.011
0.013
0.013
0.015
0.016
0.016
0.016
0.017
0.017
0.018
0.018
0.020
0.022
0.026
0.028
86.5
87.7
87.3
85.6
81.9
84.3
83.5
82.3
86.3
86.8
88.0
92.4
95.8
97.9
103.3
111.5
119.2
129.3
132.1
136.6
(Z0 = 50Ω)
S22
MAG
ANG
0.936
0.933
0.930
0.927
0.925
0.922
0.923
0.921
0.926
0.924
0.920
0.921
0.921
0.924
0.925
0.926
0.927
0.924
0.915
0.912
–1.9
–4.0
–6.1
–8.2
–10.2
–12.1
–14.2
–16.3
–18.2
–20.3
–22.3
–24.4
–26.5
–28.9
–31.4
–33.9
–36.9
–39.5
–42.4
–45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
NFmin
(dB)
0.29
0.41
0.52
0.64
0.75
0.86
0.97
1.07
1.18
1.28
1.39
1.49
1.59
1.68
1.78
1.88
1.97
2.06
2.15
Gamma Optimum
ANG
MAG
0.89 7.3
0.85 10.6
0.81 13.7
0.77 16.7
0.73 19.5
0.70 22.3
0.67 24.9
0.64 27.5
0.61 30.1
0.59 32.6
0.57 35.2
0.54 37.8
0.52 40.5
0.50 43.3
0.48 46.3
0.45 49.3
0.43 52.6
0.40 56.0
0.38 59.7
Rn
(Ω)
30.3
29.7
29.2
28.7
28.3
27.8
27.4
27.0
26.7
26.3
26.0
25.8
25.5
25.3
25.1
25.0
24.9
24.8
24.7
–4–
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ 3SK166A-2.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
3SK166A-0 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
3SK166A-2 | GaAs N-channel Dual Gate MES FET | Sony Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |