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PDF LY402 Data sheet ( Hoja de datos )
| Número de pieza | LY402 | |
| Descripción | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
| Fabricantes | Polyfet RF Devices | |
| Logotipo |  |
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polyfet rf devices
LY402
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
220.0 Watts Push - Pull
Package Style AY
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
440 Watts
Junction to
Case Thermal
Resistance
o
0.38 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
13.5 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 220.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
60
dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
% Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 0.50 mA, Vgs = 0V
2.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.30 A, Vgs = Vds
gM Forward Transconductance
5.4 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.17
Ohm
Vgs = 20V, Ids =16.00 A
Idsat
Saturation Current
34.00
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
160.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance
8.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
100.0
pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 01/17/2002
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LY402.PDF ] | |
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