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LZ21N3V 데이터시트 PDF




Sharp Electrionic Components에서 제조한 전자 부품 LZ21N3V은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 LZ21N3V 자료 제공

부품번호 LZ21N3V 기능
기능 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels
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LZ21N3V 데이터시트, 핀배열, 회로
LZ21N3V/VS
LZ21N3V/ VS
DESCRIPTION
The LZ21N3V/VS are 1/2-type (8.08 mm) solid-
state image sensors that consist of PN photo-
diodes and CCDs (charge-coupled devices). With
approximately 2 140 000 pixels (1 704 horizontal x
1 255 vertical), the sensor provides a stable high-
resolution color image.
FEATURES
• Optical size : 8.08 mm (aspect ratio 4 : 3)
• Interline scan format
• Square pixel
• Number of effective pixels : 1 650 (H) x 1 250 (V)
• Number of optical black pixels
– Horizontal : 2 front and 52 rear
– Vertical : 3 front and 2 rear
• Number of dummy bits
– Horizontal : 28
– Vertical : 2
• Pixel pitch : 3.95 µm (H) x 3.95 µm (V)
• R, G, and B primary color mosaic filters
• Supports monitoring mode
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in overflow drain voltage circuit and reset
gate voltage circuit
• Variable electronic shutter
• Packages
– LZ21N3V : 20-pin half-pitch WDIP [Plastic]
(WDIP020-P-0500)
Row space : 12.20 mm
– LZ21N3VS : 20-pin half-pitch WSOP [Plastic]
(WSOP020-P-0525)
1/2-type Interline Color CCD
Area Sensors with 2 140 k Pixels
PIN CONNECTIONS
20-PIN HALF-PITCH WDIP
20-PIN HALF-PITCH WSOP
TOP VIEW
OD 1
GND 2
OFD 3
PW 4
ØRS 5
NC1 6
NC2 7
ØH1 8
NC3 9
ØH2 10
20 OS
19 GND
18 NC5
17 NC4
16 ØV1A
15 ØV1B
14 ØV2
13 ØV3A
12 ØV3B
11 ØV4
(WDIP020-P-0500)
(WSOP020-P-0525)
PRECAUTIONS
• The exit pupil position of lens should be 30 to 50
mm from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
COMPARISON TABLE
Package
LZ21N3V
20-pin half-pitch WDIP
LZ21N3VS
20-pin half-pitch WSOP
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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LZ21N3V pdf, 반도체, 판매, 대치품
LZ21N3V/VS
CHARACTERISTICS (Drive method : 1/30 s frame accumulation)
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT NOTE
Standard output voltage
VO 150 mV 2
Photo response non-uniformity
PRNU
10 %
3
Saturation output voltage
VSAT
450 530
320 400
mV 4
mV 5
Dark output voltage
VDARK
0.5 3.0 mV 1, 6
Dark signal non-uniformity
DSNU
0.5 2.0 mV 1, 7
Sensitivity (green channel)
R
140 180
mV 8
Smear ratio
SMR
–89 –82 dB
9
Image lag
AI 1.0 % 10
Blooming suppression ratio
ABL 1 000
11
Output transistor drain current
IOD 4.0 8.0 mA
NOTES :
• Within the recommended operating conditions of VOD,
VOFD of the internal output satisfies with ABL larger than
1 000 times exposure of the standard exposure conditions,
and VSAT larger than 320 mV.
1. TA = +60 ˚C
2. The average output voltage of G signal under uniform
illumination. The standard exposure conditions are
defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. VSAT is the minimum
segment's voltage under 10 times exposure of the
standard exposure conditions. The operation of OFDC is
high. (for still image capturing)
5. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. VSAT is the minimum
segment's voltage under 10 times exposure of the
standard exposure conditions. The operation of OFDC is
low.
6. The average output voltage under non-exposure
conditions.
7. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.
8. The average output voltage of G signal when a 1 000
lux light source with a 90% reflector is imaged by a lens
of F4, f50 mm.
9. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.
10. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.
11. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.
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LZ21N3V 전자부품, 판매, 대치품
LZ21N3V/VS
q VERTICAL TRANSFER TIMING ¿FIELD ACCUMULATION MODE¡
Shutter speed
1/30 s
257 258 259 260 261 262 263 264 265 266 267 268 269 270 271 272 273 274 275 276 277 278 279 280 281 282 283 284
HD
VD
ØV1A
ØV1B
ØV2
ØV3A
ØV3B
ØV4
OFDC
ØOFD
OS
1203 1213 1223 1233 1243
1198 1208 1218 1228 1238 1248
GB RG GB RG GB RG GB RG GB RG GB
OB1 3 8 13 18
RG GB RG GB
q' VERTICAL TRANSFER TIMING ¿FIELD ACCUMULATION MODE¡
Shutter speed
1/30 s
519 520 521 522 523 524 525 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
HD
VD
ØV1A
ØV1B
ØV2
ØV3A
ØV3B
ØV4
OFDC
ØOFD
OS
1193 1203 1213 1223 1233 1243
1198 1208 1218 1228 1238 1248
RG GB RG GB RG GB RG GB RG GB RG GB
OB1 3 8 13 18
RG GB RG GB
7

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Sharp Electrionic Components
Sharp Electrionic Components

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