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What is M1MA151WKT1?

This electronic component, produced by the manufacturer "Motorola Inc", performs the same function as "Common Cathode Silicon Dual Switching Diodes".


M1MA151WKT1 Datasheet PDF - Motorola Inc

Part Number M1MA151WKT1
Description Common Cathode Silicon Dual Switching Diodes
Manufacturers Motorola Inc 
Logo Motorola  Inc Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M1MA151WKT1/D
Common Cathode Silicon
Dual Switching Diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use
in ultra high speed switching applications. These devices are housed in the SC–59
package which is designed for low power surface mount applications.
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
M1MA151WKT1
M1MA152WKT1
Motorola Preferred Devices
SC–59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
21
ANODE
Value
Unit
Reverse Voltage
M1MA151WKT1
M1MA152WKT1
VR
40 Vdc
80
Peak Reverse Voltage
M1MA151WKT1
VRM
40
Vdc
M1MA152WKT1
80
Forward Current
Single
Dual
IF 100 mAdc
150
Peak Forward Current
Single
Dual
IFM 225 mAdc
340
Peak Forward Surge Current Single
Dual
IFSM(1)
500
750
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD 200
Junction Temperature
TJ 150
Storage Temperature
Tstg – 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
mW
°C
°C
Condition
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
M1MA151WKT1
M1MA152WKT1
M1MA151WKT1
M1MA152WKT1
IR
VF
VR
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
Diode Capacitance
Reverse Recovery Time
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
2
1
3
CASE 318D–03, STYLE 3
SC–59
Min Max Unit
— 0.1 µAdc
— 0.1
— 1.2 Vdc
40 — Vdc
80 —
— 2.0 pF
— 3.0 ns
1

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M1MA151WKT1 equivalent
PACKAGE DIMENSIONS
M1MA151WKT1 M1MA152WKT1
A
L
3
S
21
B
D
G
C
H
J
K
CASE 318D–03
ISSUE E
SC–59
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.70 3.10 0.1063 0.1220
B 1.30 1.70 0.0512 0.0669
C 1.00 1.30 0.0394 0.0511
D 0.35 0.50 0.0138 0.0196
G 1.70 2.10 0.0670 0.0826
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.65 0.0493 0.0649
S 2.50 3.00 0.0985 0.1181
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5


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