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부품번호 | FG2000JV-90DA 기능 |
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기능 | HIGH POWER INVERTER USE PRESS PACK TYPE | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
FG2000JV-90DA
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimension in mm
GATE (WHITE)
356 ± 8
φ 63 ± 0.5
AUXILIARY CATHODE
CONNECTOR (RED)
φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
¡ITQRM Repetitive controllable on-state current ............. 2000A
¡IT(AV) Average on-state current ...................... 600A
¡VDRM Repetitive peak off state voltage ........ 4500V
¡Anode short type
φ 63 ± 0.5
φ 93 max
ANODE
φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
+ : VGK = –2V
Voltage class
90DA
17
17
17
4500
4500
3600
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VD = 2250V, VDM = 3375V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH
f = 60Hz, sine wave θ = 180°, Tf = 91°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 2250V, IGM = 30A, Tj = 125°C
Recommended value 20
Standard value
Ratings
2000
940
600
13
7 × 105
500
10
17
50
700
250
23.8
50
150
–40 ~ +125
–40 ~ +150
18 ~ 24
760
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Feb.1999
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
25 VRG = 17V
CS = 4.0µF
LS = 0.3µH
20 Tj = 125°C
tgq
15
ts
10
5
0 500 1000 1500 2000 2500
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
700
600
500
400
300
200
0
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
500 1000 1500 2000 2500
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
2.4
diT/dt = 300A /µs
2.0 200A/µs
1.6 100A/µs
1.2
0.8
0.4
0
0
VD = 2250V
IGM = 30A
diG/dt = 10A/µs
CS = 4.0µF
RS = 5Ω
Tj = 125°C
400 800 1200 1600 2000 2400
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000JV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
VD = 2250V
VDM = 3375V
IT = 2000A
40 VRG = 17V
CS = 4.0µF
LS = 0.3µH
30 Tj = 125°C
20 tgq
10 ts
0
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
800
700
600
500 VD = 2250V
VDM = 3375V
IT = 2000A
400 VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
300
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µs)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
6.0
5.0 4µF
CS = 2µF
4.0 6µF
3.0
2.0
1.0
0
0
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
VRG = 17V
LS = 0.3µH
Tj = 125°C
400 800 1200 1600 2000 2400
TURN OFF CURRENT (A)
Feb.1999
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부품번호 | 상세설명 및 기능 | 제조사 |
FG2000JV-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
FG2000JV-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Powerex Power Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |