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부품번호 | FG4000EX-50DA 기능 |
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기능 | HIGH POWER INVERTER USE PRESS PACK TYPE | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
FG4000EX-50DA
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000EX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
500 ± 8
q ITQRM Repetitive controllable on-state current ........... 4000A
q IT(AV) Average on-state current .....................1600A
q VDRM Repetitive peak off state voltage ...................2500V
q Anode short type
AUXILIARY CATHODE
CONNECTOR (RED)
φ 85 ± 0.2
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 85 ± 0.2
φ 120 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
+ : VGK = –2V
Voltage class
50DA
17
17
17
2500
2500
1500
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 1875V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 72°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 1250V, IGM = 50A, Tj = 125°C
Recommended value 45
Standard value
Ratings
4000
2500
1600
24
2.4 × 106
500
10
17
130
1100
520
33
130
300
–40 ~ +125
–40 ~ +150
39 ~ 55
1600
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
tgq
25
ts
20
15 VD = 1250V
VDM = 1875V
diGQ/dt = –50A/µs
10 VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
5
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
1200
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1000
800
600
400
200
0
1000
2000
VD = 1250V
VDM = 1875V
diGQ/dt = –50A/µs
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
3000 4000 5000
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
2.0
diT/dt = 500A /µs
300A /µs
1.5
100A /µs
1.0
0.5
0
0
1000
2000
VD = 1250V
IGM = 50A
diG/dt = 30A/µs
CS = 6.0µF
RS = 5Ω
Tj = 125°C
3000 4000 5000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000EX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
30
tgq
20 VD = 1250V
VDM = 1875V
ts
IT = 4000A
10 VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
0
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1400
1200
1000
800
600
400
0
VD = 1250V
VDM = 1875V
IT = 4000A
VRG = 17V
CS = 6.0µF
LS = 0.2µH
Tj = 125°C
10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
10
9
8
7
6
5
4 VD = 1250V
VDM = 1875V
3 diGQ/dt = –50A/µs
2 VRG = 17V
CS = 6.0µF
1 LS = 0.2µH
Tj = 125°C
0
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
Aug.1998
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부품번호 | 상세설명 및 기능 | 제조사 |
FG4000EX-50DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
FG4000EX-50DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Powerex Power Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |