|
|
PDF FGB30N6S2 Data sheet ( Hoja de datos )
| Número de pieza | FGB30N6S2 | |
| Descripción | 600V/ SMPS II Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGB30N6S2 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
G
G
E
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
1 page  
Typical Performance Curves (Continued)
175
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
150
125
TJ = 25oC
100
75
50
25 TJ = 125oC
TJ = -55oC
0
5 6 7 8 9 10 11 12 13 14 15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
16
IG(REF) = 1mA, RL = 25Ω, TJ = 25oC
14
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
0.8
ICE = 24A
0.6
0.4 ICE = 12A
0.2
ICE = 6A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
1.0
10 100
RG, GATE RESISTANCE (Ω)
1000
Figure 16. Total Switching Loss vs Gate
Resistance
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8
CIES
0.6
0.4
COES
0.2
0.0
0
CRES
10 20 30 40 50 60 70 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
90 100
Figure 17. Capacitance vs Collector to Emitter
Voltage
3.5
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
3.0
2.5 ICE = 24A
ICE = 12A
2.0
ICE = 6A
1.5
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGB30N6S2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGB30N6S2 | 600V/ SMPS II Series N-Channel IGBT | Fairchild Semiconductor |
| FGB30N6S2D | 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |