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FGC4000BX-90DS 데이터시트 PDF




Mitsubishi Electric Semiconductor에서 제조한 전자 부품 FGC4000BX-90DS은 전자 산업 및 응용 분야에서
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부품번호 FGC4000BX-90DS 기능
기능 HIGH POWER INVERTER USE PRESS PACK TYPE
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FGC4000BX-90DS 데이터시트, 핀배열, 회로
FGC4000BX-90DS
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC4000BX-90DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
φ134 ± 0.4
+0.2
16-φ4.5 0
22.5° ± 0.5°
M3!0.5 2.5DEPTH
(4
+
0
0.3
)
φ147 ± 0.4 NOTE1
φ85 ± 0.2
q ITQRM Repetitive controllable on-state current ........... 4000A
q IT(AV) Average on-state current .....................1200A
q VDRM Repetitive peak off state voltage ................... 4500V
q Anode short type
φ85 ± 0.2
φ120MAX
(φ127)
φ3.5 ± 0.2 2.2 ± 0.2DEPTH
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
VLTDS
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Long term DC stability voltage+
+ : VGK = –2V
Voltage class
90DS
21
21
21
4500
4500
3600
3000
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
(Snubberless)
VDM = 4500V, VD = 2250V, LC = 0.2µH, VRG = 21V
diGQ/dt = 6000A/µs. Tj = 25/125°C
Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, Tf = 70°C
One half cycle at 60Hz, Tj = 125°C
VD = 2250V, ITM = 4000A, IGM= 200A, Tj= 125°C
diG/dt = 100A/µs (Snubberless)
(Recommended value 40kN)
Typical value
Ratings
4000
1880
1200
25
2.6 × 106
1000
10
21
1000
4000
10
120
200
6300
–20 ~ +125
–20 ~ +150
32 ~ 48
1500
Unit
V
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
kW
kW
W
W
°C
°C
kN
g
Aug.1998




FGC4000BX-90DS pdf, 반도체, 판매, 대치품
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC4000BX-90DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
6000
5000
4000
3000
θ
360°
180°
RESISTIVE,
INDUCTIVE
120°
90°
60°
LOAD θ = 30°
DC
270°
2000
1000
0
0 400 800 1200 1600 2000
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(MAXIMUM)
16
VD = 24V
14 RL = 0.1
DC METHOD
12
10
8
IGT
6
4
2
0
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
20
16
12
8
VD = 2250V
VDM = VD + 0.44 ! IT
4 diGQ/dt = 6000A/µs
CC = 6.0µF
LC = 0.2µH
Tj = 125°C
0
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
150
125 θ
360°
RESISTIVE,
100 INDUCTIVE
LOAD
75
50
120°
θ = 30° 60° 90° 180° 270° DC
25
0 500 1000 1500 2000
AVERAGE ON-STATE CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
3.0
VD = 2250V
IGM = 200A
2.5 diT/dt = 1000A/µs
diG/dt = 100A/µs
Tj = 125°C
2.0
1.5
1.0
0.5
0
0 1000 2000 3000 4000 5000
TURN ON CURRENT (A)
Aug.1998

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FGC4000BX-90DS

HIGH POWER INVERTER USE PRESS PACK TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

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