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부품번호 FGH50N6S2D 기능
기능 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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FGH50N6S2D 데이터시트, 핀배열, 회로
July 2002
FGH50N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH50N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49344
Diode formerly Developmental Type TA49392
Features
• 100kHz Operation at 390V, 40A
• 200kHZ Operation at 390V, 25A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 70nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
• Low Conduction Loss
Package
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
75 A
IC110
Collector Current Continuous, TC = 110°C
60 A
ICM Collector Current Pulsed (Note 1)
240 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
150A at 600V
EAS Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
480 mJ
PD Power Dissipation Total TC = 25°C
463 W
Power Dissipation Derating TC > 25°C
3.7 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2




FGH50N6S2D pdf, 반도체, 판매, 대치품
Typical Performance Curves TJ = 25°C unless otherwise noted
2500
RG = 3, L = 200µH, VCE = 390V
2250
2000
1750
TJ = 25oC, TJ = 125oC, VGE = 10V
1500
1250
1000
750
500
250
0
0
TJ = 25oC, TJ = 125oC, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
1400
RG = 3, L = 200µH, VCE = 390V
1200
1000
800
TJ = 125oC, VGE = 10V, VGE = 15V
600
400
200
0
0
TJ = 25oC, VGE = 10V, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
25
RG = 3, L = 200µH, VCE = 390V
20
TJ = 25oC, TJ = 125oC, VGE = 10V
15
TJ = 25oC, TJ = 125oC, VGE = 15V
10
5
0
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
70
RG = 3, L = 200µH, VCE = 390V
60
50
40
TJ = 25oC, TJ = 125oC, VGE = 10V
30
20
10
0
0
TJ = 25oC, TJ = 125oC, VGE =15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
100
RG = 3, L = 200µH, VCE = 390V
90
80
VGE = 10V, VGE = 15V, TJ = 125oC
70
125
RG = 3, L = 200µH, VCE = 390V
100
75 TJ = 125oC, VGE = 10V, VGE = 15V
60
50
40
0
VGE = 10V, VGE = 15V, TJ = 25oC
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
50
TJ = 25oC, VGE = 10V, VGE = 15V
25
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
Figure 12. Fall Time vs Collector to Emitter
Current
©2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2

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FGH50N6S2D 전자부품, 판매, 대치품
Typical Performance Curves TJ = 25°C unless otherwise noted
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-210-5
SINGLE PULSE
10-4 10-3 10-2 10-1 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
101
FGH50N6S2D
DIODE TA49392
RG = 3
FGH50N6S2D
L = 200µH
+
- VDD = 390V
Figure 26. Inductive Switching Test Circuit
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I
tfI
trI
td(ON)I
Figure 27. Switching Test Waveforms
©2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2

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FGH50N6S2D

600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Fairchild Semiconductor
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