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FGL40N150 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FGL40N150은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FGL40N150 자료 제공

부품번호 FGL40N150 기능
기능 Electrical Characteristics of the IGBT
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FGL40N150 데이터시트, 핀배열, 회로
FGL40N150D
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1




FGL40N150 pdf, 반도체, 판매, 대치품
1000
Common Emitter
V =±
GE
15V,
R
G
=
51
T = 25oC
C
T = 125oC
C
tf
td(off)
100
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 7. Turn-Off Characteristics vs.
Collector Current
10000
Common Emitter
V =±
GE
15V,
R
G
=
51
T = 25oC
C
T = 125oC
C
1000 Eoff
Eon
100
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 9. Switching Loss vs. Collector Current
1000
Common Emitter
V =±
GE
15V,
R
G
=
51
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 8. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
V = 600V, V = ± 15V
CC GE
IC = 40A
T = 25oC
C
TC = 125oC
tf
100
td(off)
10
Gate Resistance, RG []
100
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 600V, V = ± 15V
CC GE
IC = 40A
TC = 25oC
T = 125oC
C
100
tr
td(on)
10
10
Gate Resistance, RG []
100
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
10000
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 40A
C
T = 25oC
C
TC = 125oC
1000
Eoff
Eon
10
Gate Resistance, RG []
100
Fig 12. Switching Loss vs. Gate Resistance
FGL40N150D Rev. A1

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FGL40N150 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5

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-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

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관련 데이터시트

부품번호상세설명 및 기능제조사
FGL40N150

Electrical Characteristics of the IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGL40N150D

Electrical Characteristics of the IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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