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부품번호 FGL60N100BNTD 기능
기능 NPT-Trench IGBT
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FGL60N100BNTD 데이터시트, 핀배열, 회로
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Applications
• UPS, Welder
March 2014
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
1
C
G
E
Ratings
1000
25
60
42
200
15
180
72
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Ratings
0.69
2.08
25
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com




FGL60N100BNTD pdf, 반도체, 판매, 대치품
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
Cies
1000
Coes
100 Cres
Common Emitter
VGE = 0V, f = 1MHz
T = 25
C
0 5 10 15 20 25
Collector-Emitter Voltage, VCE [V]
30
Figure 9. Switching Characteristics vs.
Collector Current
1000
VCC=600V, Rg=51
VGE=± 15V, TC=25
Tdoff
Tf
Tr
100 Tdon
10 20 30 40 50 60
Collector Current, IC [A]
Figure 11. SOA Characteristics
IC MAX. (Pulsed)
100 I MAX. (Continuous)
C
10
DC Operation
50us
100us
1ms
1
0.1
1
Single Nonrepetitive Pulse
TC = 25
Curve must be darated
linearly with increase
in temperature
10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Switching Loss vs. Gate Resistance
10000
1000
VCC=600V, IC=60A
VGE=? 5V
TC=25oC
Tdoff
Tr
Tdon
Tf
100
10
0
50 100 150
Gate Resistance, RG [? ]
200
Figure 10. Gate Charge Characteristics
20
Common Emitter
VCC=600V, RL=10
TC=25
15
10
5
0
0 50 100 150 200 250 300
Gate Charge, Qg [nC]
Figure 12. Forward Characteristics
100
T = 100
C
10
TC = 25
1
0.1
0.0
0.5 1.0 1.5 2.0
Forward Voltage, VFM [V]
2.5
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
4
www.fairchildsemi.com

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FGL60N100BNTD 전자부품, 판매, 대치품
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Formative / In Design
Preliminary
First Production
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Obsolete
Full Production
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
7
www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FGL60N100BNTD

NPT-Trench IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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