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부품번호 | FGL60N170D 기능 |
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기능 | Electrical Characteristics of IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FGL60N170D
October 2001
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
FGL60N170D is designed for the Induction Heating
applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
FGL60N170D
1700
± 25
60
30
180
15
150
200
80
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B
1000
Common Emitter
V = 600V, V = ± 15V
CC GE
IC = 60A
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
10
100
Gate Resistance, RG [Ω]
Fig 7. Turn on Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 600V, V = ± 15V
CC GE
I = 60A
C
T = 25oC
C
T = 125oC
C
Eoff
1000
Eon
10
Gate Resistance, RG [Ω]
100
Fig 9. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = ± 15V
I = 60A
C
TC = 25oC
TC = 125oC
td(off)
100
tf
10
Gate Resistance, RG [Ω]
100
Fig 8. Turn off Characteristics vs.
Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 10. Turn on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = ± 15V, RG = 51Ω
TC = 25oC
T = 125oC
C
100
tf
td(off)
20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 11. Turn off Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
10000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
1000
Eoff
Eon
100
20 30 40 50 60 70 80 90
Collector Current, IC [A]
Fig 12. Switching Loss vs. Collector Current
FGL60N170D Rev. B
4페이지 Package Dimension
TO-264
20.00 ±0.20
(8.30)
(8.30)
(1.00)
(2.00)
(R1.00)
(7.00) (7.00)
(0.50)
4.90 ±0.20
(1.50)
2.50 ±0.20
5.45TYP
[5.45 ±0.30]
(1.50)
3.00 ±0.20
1.00
+0.25
–0.10
5.45TYP
[5.45 ±0.30]
(1.50)
0.60
+0.25
–0.10
2.80 ±0.30
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
FGL60N170D Rev. B
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGL60N170D | Electrical Characteristics of IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |