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부품번호 FGP30N6S2 기능
기능 600V/ SMPS II Series N-Channel IGBT
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FGP30N6S2 데이터시트, 핀배열, 회로
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
G
G
E
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1




FGP30N6S2 pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
400
RG = 10, L = 500µH, VCE = 390V
350
300
TJ = 125oC, VGE = 10V, VGE = 15V
250
200
150
100
TJ = 25oC, VGE = 10V, VGE = 15V
50
0
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
16
RG = 10, L = 500µH, VCE = 390V
14
12
10
TJ = 25oC, TJ = 125oC, VGE = 10V
8
6
4
TJ = 25oC, TJ = 125oC, VGE = 15V
2
0
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
90
RG = 10, L = 500µH, VCE = 390V
80
70
60
50
40
30
20
0
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
600
RG = 10, L = 500µH, VCE = 390V
500
400
TJ = 125oC, VGE = 10V, VGE = 15V
300
200
100
0
0
TJ = 25oC, VGE = 10V, VGE = 15V
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
40
RG = 10, L = 500µH, VCE = 390V
35
30
25
TJ = 125oC, VGE = 15V, VGE = 10V
20
15
10
TJ = 25oC, VGE = 10V, VGE =15V
5
0 0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
120
RG = 10, L = 500µH, VCE = 390V
100
TJ = 125oC, VGE = 10V OR 15V
80
60
TJ = 25oC, VGE = 10V OR 15V
40
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

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FGP30N6S2 전자부품, 판매, 대치품
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handlers
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as ECCOSORBDLD26or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM. td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
©2003 Fairchild Semiconductor Corporation
ECCOSORBDis a Trademark of Emerson and Cumming, Inc.
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

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