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부품번호 | FGP30N6S2D 기능 |
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기능 | 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 12 페이지수
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Package
JEDEC STYLE TO-247
Symbol
E
C
JEDEC STYLE TO-220AB
G EC G
JEDEC STYLE TO-263AB
CG
C
G
E
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
Typical Performance Curves (Continued)
400
RG = 10Ω, L = 500mH, VCE = 390V
350
300
TJ = 125oC, VGE = 10V, VGE = 15V
250
200
150
100
TJ = 25oC, VGE = 10V, VGE = 15V
50
0
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
16
RG = 10Ω, L = 500µH, VCE = 390V
14
12
10
TJ = 25oC, TJ = 125oC, VGE = 10V
8
6
4
TJ = 25oC, TJ = 125oC, VGE = 15V
2
0
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
90
RG = 10Ω, L = 500µH, VCE = 390V
80
70
60
50
40
30
20
0
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2001 Fairchild Semiconductor Corporation
600
RG = 10Ω, L = 500mH, VCE = 390V
500
400
TJ = 125oC, VGE = 10V, VGE = 15V
300
200
100
0
0
TJ = 25oC, VGE = 10V, VGE = 15V
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
30
RG = 10Ω, L = 500mH, VCE = 390V
25
20
TJ = 125oC, VGE = 15V, VGE = 10V
15
10
TJ = 25oC, VGE = 10V, VGE =15V
5
0 0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
120
RG = 10Ω, L = 500µH, VCE = 390V
100
TJ = 125oC, VGE = 10V OR 15V
80
60
TJ = 25oC, VGE = 10V OR 15V
40
0 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
4페이지 Typical Performance Curves (Continued)
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
10-2
10-5
SINGLE PULSE
10-4 10-3 10-2 10-1 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
101
FGH30N6S2D
DIODE TA49390
RG = 10Ω
FGH30N6S2D
L = 500µH
+
VDD = 390V
-
Figure 26. Inductive Switching Test Circuit
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I
tfI
trI
td(ON)I
Figure 27. Switching Test Waveforms
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FGP30N6S2 | 600V/ SMPS II Series N-Channel IGBT | Fairchild Semiconductor |
FGP30N6S2D | 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |