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부품번호 | FGR3000CV-90DA 기능 |
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기능 | HIGH POWER INVERTER USE PRESS PACK TYPE | ||
제조업체 | Mitsubishi Electric Semiconductor | ||
로고 | |||
FGR3000CV-90DA
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
500 ± 8
q ITQRM Repetitive controllable on-state current ........... 3000A
q IT(AV) Average on-state current .......................900A
q VDRM Repetitive peak off state voltage ...................4500V
q Reverse conducting type
AUXILIARY CATHODE
CONNECTOR (RED)
φ 85 ± 0.2
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 85 ± 0.2
φ 120 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
Parameter
VDRM
VDSM
VD(DC)
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
+ : VGK = –2V
Voltage class
90DA
4500
4500
2500
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
IT2t
IR(RMS)
IR(AV)
IRSM
IR2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
RMS Reverse current
Average reverse current
Surge (non-repetitive) reverse current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 3375V, Tj = 125°C, CS = 3.5µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 70°C
One half cycle at 60Hz
One cycle at 60Hz
f = 60Hz, sine wave θ = 180°, Tf = 70°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 2250V, IGM = 40A, Tj = 125°C
Recommended value 37
Standard value
Ratings
3000
1410
900
18
1.3 × 106
1100
700
22
2.0 × 106
500
10
18
100
900
400
27
100
230
–40 ~ +125
–40 ~ +150
31 ~ 43
1450
Unit
V
V
V
Unit
A
A
A
kA
A2s
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5~20V
IT = 25~200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF GATE CURRENT
(TYPICAL)
40
VD = 2250V
35 VDM = 3375V
diGQ/dt = –40A/µs
30 VRG = 17V
CS = 3.5µF
25
LS = 0.2µH
Tj = 125°C
tgq
20
15 ts
10
5
0
0 500 1000 1500 2000 2500 3000 3500 4000
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
800
VD = 2250V
VDM = 3375V
700
diGQ/dt = –40A/µs
VRG = 17V
CS = 3.5µF
LS = 0.2µH
600 Tj = 125°C
500
400
300
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
8.0
IT = 3000A
7.0 VD = 2250V
diT/dt = 500A/µs
6.0 diG/dt = 20A/µs
Tj = 125°C
5.0
4.0
tgt
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
tgq
30
20 VD = 2250V
ts
VDM = 3375V
IT = 3000A
10
VRG = 17V
CS = 3.5µF
LS = 0.2µH
Tj = 125°C
0
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
900
VD = 2250V
850 VDM = 3375V
IT = 3000A
800
VRG = 17V
CS = 3.5µF
750
LS = 0.2µH
Tj = 125°C
700
650
600
550
500
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
Aug.1998
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부품번호 | 상세설명 및 기능 | 제조사 |
FGR3000CV-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
FGR3000CV-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Powerex Power Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |