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부품번호 | FH105 기능 |
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기능 | High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
전체 5 페이지수
Ordering number:ENN6219
NPN Epitaxial Planar Silicon Composite Transistor
FH105
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH105 is formed with two chips, being equiva-
lent to the 2SC5245, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
B1 E1 E2
Tr1
Tr2
C1 B2 C2
Specifications
Package Dimensions
unit:mm
2160
[FH105]
0.25
654
12
0.65
2.0
3
0.15
0 to 0.1
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
SANYO : MCP6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm2×0.8mm) 1unit
Mounted on a ceramic board (250mm2×0.8mm)
Ratings
20
10
1.5
30
150
300
150
–55 to +150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage Difference
Symbol
Conditions
ICBO
IEBO
hFE
hFE
(small/large)
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VBE
(large-small)
VCB=5V, IC=10mA
Note) The specifications shown above are for each individual transistor.
Marking : 105
Ratings
min typ
90
max
1.0
10
200
Unit
µA
µA
0.7 0.95
1.0 mV
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1702 No.6219–1/5
FH105
S12e
f=200MHz to 2000MHz(200MHz Step)
150°
±180°
120°
90°
60°
VCE=5V
IC=5mA
2.0GHz
2.0GHz
2.0GHz
VCE=5V
2.0GHz
IC=10mA
30°
0.2GHz
0.2GHz
0.2GHz
VCE=2V
IC=3mA
VCE=1V
IC=1mA
0.2GHz
0.04 0.08 0.12 0.16 0.2 0
--150°
--120°
--90°
--30°
--60°
IT00333
S22e
f=200MHz to 2000MHz(200MHz Step)
j50
j25
j10
j100
j150
j200
j250
0 10 25
--j10
--j25
150
50 100 VCE=5V 250
2.20.G0GHHz zIC=100.m2GA0.H20G.z2HGzHz 0.2GHz
2.0GHz
--j250
2.0GHz
--j200
VCE=5V
VCE=1V --j150
IC=5mA
IC=1mA
VCE=2V
--j100
IC=3mA
--j50
IT00334
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
200
0.763
–37.5
400
0.590
–65.4
600
0.456
–85.5
800
0.374
–102.0
1000
0.323
–115.0
1200
0.288
–127.5
1400
0.264
–137.7
1600
0.248
–147.4
1800
0.239
–156.9
2000
0.235
–165.7
VCE=5V, IC=10mA, ZO=50Ω
Freq (MHz)
| S11 |
200 0.605
∠ S11
–52.6
400
0.417
–84.6
600
0.319
–106.3
800
0.266
–124.6
1000
0.238
–136.5
1200
0.225
–148.9
1400
0.215
–158.3
1600
0.213
–167.3
1800
0.212
–175.6
2000
0.216
–177.5
| S21 |
11.926
9.202
7.173
5.743
4.785
4.105
3.599
3.213
2.905
2.651
| S21 |
16.354
11.011
8.026
6.250
5.115
4.336
3.813
3.365
3.030
2.754
∠ S21
146.9
124.3
109.4
98.7
90.5
83.6
77.5
71.3
66.4
61.3
∠ S21
136.2
113.3
100.5
91.3
84.7
78.8
73.4
68.1
63.5
58.9
| S12 |
0.036
0.058
0.073
0.086
0.098
0.110
0.123
0.136
0.150
0.165
| S12 |
0.031
0.048
0.062
0.076
0.090
0.104
0.119
0.135
0.150
0.166
∠ S12
70.7
60.9
57.4
56.7
56.7
57.2
57.7
57.6
57.6
57.2
∠ S12
67.5
62.4
62.2
63.4
64.3
64.4
64.5
63.8
63.1
62.5
| S22 |
0.892
0.740
0.631
0.566
0.528
0.505
0.488
0.476
0.466
0.462
| S22 |
0.804
0.622
0.533
0.491
0.469
0.458
0.449
0.443
0.436
0.438
∠ S22
–19.1
–29.1
–33.7
–35.8
–37.2
–38.4
–39.6
–41.2
–43.3
–45.4
∠ S22
–23.9
–30.5
–32.0
–32.4
–33.2
–34.6
–35.8
–37.7
–39.6
–41.9
No.6219–4/5
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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