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부품번호 | FJN4304R 기능 |
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기능 | PNP Epitaxial Silicon Transistor | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 4 페이지수
FJN4304R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=47KΩ)
• Complement to FJN3304R
1 TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
-50
-10
-100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Equivalent Circuit
R1
B
R2
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -10µA, IE=0
IC= -100µA, IB=0
VCB= -40V, IE=0
VCE= -5V, IC= -5mA
IC= -10mA, IB= -0.5mA
VCE= -10V, IC=-5mA
VCB= -10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE= -5V, IC= -100µA
VCE= -0.3V, IC= -2mA
Min.
-50
-50
68
-0.5
32
0.9
Typ.
200
5.5
47
1
Max.
-0.1
-0.3
-3
62
1.1
C
E
Units
V
V
µA
V
MHz
pF
V
V
KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
TRADEMARKS
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
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systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ FJN4304R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FJN4304R | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |