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PDF FJPF3835 Data sheet ( Hoja de datos )
| Número de pieza | FJPF3835 | |
| Descripción | Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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FJPF3835
Power Amplifier
• High Current Capability : IC=8A
• High Power Dissipation
• Wide S.O.A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-220F
1.Base 2.Collector 3.Emitter
Value
200
120
8
8
16
30
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE * DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn On Time
tF Fall Time
tSTG
Storage Time
* Pulse Test : PW=20µs
IC=5mA, IE=0
IC=10mA, RBE=∞
IE=5mA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=5V, IC=1A
VCB=10V, f=1MHz
VCC=20V,
IC=1A=10IB1=-10IB2
RL=20Ω
Min.
200
120
8
120
Typ.
30
210
0.26
0.68
6.68
Max.
0.1
0.1
250
0.5
1.2
Units
V
V
V
mA
mA
V
V
MHz
pF
µs
µs
µs
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FJPF3835.PDF ] | |
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