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PDF FJX733 Data sheet ( Hoja de datos )
| Número de pieza | FJX733 | |
| Descripción | Low Frequency Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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FJX733
Low Frequency Amplifier
• Collector-Base Voltage VCBO= -60V
• Complement to FJX945
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
2
1 SOT-323
1. Base 2. Emitter 3. Collector
Ratings
-60
-50
-5
-150
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -100, IE=0
IC= -10mA. IB=0
IE = -10. IC=0
VCB= -25V, IE=0
VEB= -3V, IC=0
VCE= -6V, IC= -1mA
IC= -100mA, IB= -10mA
VCE= -6V, IC= -1mA
VCE= -6V, IC= -10mA
VCB= -10V, IE = 0
f=1MHz
NF Noise Figure
VCE= -6V, IC= -0.3mA
f=1MHz, Rs=10K
Min.
-60
-50
-5
40
-0.50
50
Typ.
-0.18
-0.62
180
2.8
6.0
Max.
-100
-100
700
-0.3
-0.80
Units
V
V
V
nA
nA
V
V
MHz
pF
20 dB
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Marking
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
SBX
©2002 Fairchild Semiconductor Corporation
Grade
Rev. B2, August 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FJX733.PDF ] | |
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