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Datasheet FMBL1G200US60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FMBL1G200US60 | Molding Type Module FMBL1G200US60
July 2001
IGBT
FMBL1G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninter | Fairchild Semiconductor | data |
FMB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FMB-22H | Schottky Barrier Diodes 20V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
T Sanken electric diode | | |
2 | FMB-22L | Schottky Barrier Diodes 20V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
T Sanken electric diode | | |
3 | FMB-2306 | 30A Schottky barrier diode in TO220F package 30A Schottky barrier diode in TO220F package
FMB-2306
sFeature
qI F =30A in TO220F package qTj=150°C guaranteed
sAbsolute maximum ratings
Parameter VRM IF(AV) IFSM I t Tj Tstg
2
s Electrical characteristics
Conditions Parameter VF IR Ratings 0.7max 8.0max 115max 400max 4.0max Unit V mA mA mA °C Sanken electric diode | | |
4 | FMB-24 | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
5 | FMB-24H | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
6 | FMB-24L | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
7 | FMB-24L | Schottky Barrier Diodes
Schottky Barrier Diodes
VRM (V) Package Part Number I F (AV) (A) 0.5 1.0 1.5 2.0 2.0 3.0 5.0 6.0 1.0 1.0 1.0 1.5 1.7 2.5 3.0 3.0 5.0 10.0 15 4.0 6.0 10.0 10 10 12 15 15 15 15 20 30 30 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
40V
VF (V) max 0.58 0.55 0.55 0.5 0.6 0.55 0.55 Allegro Microsystems diode | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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