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PDF FCX491 Data sheet ( Hoja de datos )
| Número de pieza | FCX491 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FCX491
C
COMPLEMENTARY TYPE – FCX591
PARTMARKING DETAIL – N1
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80 V
Collector-Emitter Voltage
VCEO
60 V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current IC 1 A
Peak Pulse Current
ICM 2 A
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-65 to +150
°C
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Breakdown Voltages
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
80
60
5
V
V
V
100 nA
100 nA
100 nA
0.25 V
0.50 V
1.1 V
IC=100µA
IC=10mA*
IE=100µA
VCB=60V,
VCE=60V
VEB=4V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0 V
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE 100
100 300
80
30
IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
fT 150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT491 datasheet
3 - 86
1 page | ||
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| PDF Descargar | [ Datasheet FCX491.PDF ] | |
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