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PDF FCX491A Data sheet ( Hoja de datos )
| Número de pieza | FCX491A | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 1 Amp continuous current
FCX491A
C
COMPLEMENTARY TYPE-
PARTMARKING DETAILS -
FCX591A
N2
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
IC
Continuous Collector Current
ICM
Power Dissipation
PTOT
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL MIN. MAX.
40
40
5
1
2
1
-65 to +150
UNIT CONDITIONS.
V
V
V
A
A
W
°C
Breakdown Voltages
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO,
ICES
IEBO
VCE(sat)
40
40
5
VBE(sat)
VBE(on)
V IC=100µA
V IC=10mA*
V IE=100µA
100 nA VCB=30V,
100 nA VCE=30V
100 nA VEB=4V
0.3 V IC=500mA, IB=50mA*
0.5 V IC=1A, IB=100mA*
1.1 V IC=1A, IB=100mA*
1.0 V IC=1A, VCE=5V*
Static Forward Current
Transfer
Transitional Frequency
hFE 300
300 900
200
35
IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
fT 150
MHz IC=50mA, VCE=10V
f=100MHz
Collector-Base Breakdown
Voltage
Cobo
10 pF VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet
3 - 87
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