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부품번호 FDC3616N 기능
기능 100V N-Channel PowerTrench MOSFET
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FDC3616N 데이터시트, 핀배열, 회로
January 2004
FDC3616N
100V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Load Switching
Features
3.7 A, 100 V.
RDS(ON) = 70 m@ VGS = 10 V
RDS(ON) = 80 m@ VGS = 6.0 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (23nC typical)
High power and current handling capability
Fast switching speed.
G
S
S
SuperSOT-6TM FLMP
S
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.616
FDC3616N
7’’
Bottom Drain
1
2
3
Ratings
100
± 20
3.7
20
2
1.1
55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)




FDC3616N pdf, 반도체, 판매, 대치품
Typical Characteristics
20
VGS = 10V
4.5V
6.0V
5.0V
15
10
4.0V
5
3.5V
0
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.2
2
ID = 3.7 A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
30
25
20
15
10
5
0
2
VDS = 10V
TA = 125oC
25oC
-55oC
2.5 3 3.5 4 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics.
1.8
1.6
VGS = 4.0V
1.4
1.2 4.5V
1
5.0V
6.0V
10V
0.8
0
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.16
ID =1.85 A
0.14
0.12
TA = 125oC
0.1
0.08
TA = 25oC
0.06
0.04
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC3616N Rev C1 (W)

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FDC3616N 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ ISOPLANAR™
POP™
SuperFET™
ActiveArray™ FAST
LittleFET™
Power247™
SuperSOT™-3
Bottomless™ FASTr™
MICROCOUPLER™ PowerTrench
SuperSOT™-6
CoolFET™
FPS™
MicroFET™
QFET
SuperSOT™-8
CROSSVOLTFRFET™
MicroPak™
QS™
SyncFET™
DOME™
GlobalOptoisolator™ MICROWIRE™
QT Optoelectronics™ TinyLogic
EcoSPARK™ GTO™
MSX™
Quiet Series™
TINYOPTO™
E2CMOSTM
HiSeC™
MSXPro™
RapidConfigure™
TruTranslation™
EnSignaTM
FACT™
I2C™
OCX™
ImpliedDisconnect™ OCXPro™
RapidConnect™
UHC™
SILENT SWITCHERUltraFET
Across the board. Around the world.™ OPTOLOGIC
SMART START™ VCX™
The Power Franchise™
OPTOPLANAR™ SPM™
Programmable Active Droop™
PACMAN™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7

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부품번호상세설명 및 기능제조사
FDC3616N

100V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
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