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부품번호 | FDC5614 기능 |
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기능 | 60V P-Channel Logic Level PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
February 2002
FDC5614P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –3 A, –60 V.
RDS(ON) = 0.105 Ω @ VGS = –10 V
RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.564
FDC5614P
7’’
Ratings
–60
±20
–3
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC5614P Rev C1 (W)
Typical Characteristics
10
ID = -3.0A
8
6
VDS = -10V
-20V
-30V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
100µs
10ms
100ms
1s
VGS = -10V
0.1 SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
0.01
0.1
1
10s
DC
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
CISS
f = 1 MHz
VGS = 0 V
400
200
CRSS
0
COSS
0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
30
RθJA = 156°C/W
TA = 25°C
20
10
0
0.1
1 10 100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDC5614P Rev C1 (W)
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC5612 | 60V N-Channel PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDC5614 | 60V P-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |