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부품번호 | FDC6020C 기능 |
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기능 | Complementary PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
November 2003
FDC6020C
Complementary PowerTrench MOSFET
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor Driving
Features
• Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V
RDS(ON) = 82 mΩ @ VGS = – 2.5 V
• Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V
RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for single Operation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.020 FDC6020C
7’’
2003 Fairchild Semiconductor Corporation
Bottom Drain Contact
Q2 (N)
4
3
52
61
Q1 (P)
Bottom Drain Contact
Q1 Q2
–20 20
±12 ±12
–4.2 5.9
–20
1.6
20
1.8
1.2
–55 to +150
Units
V
V
A
W
°C
68 °C/W
1
Tape width
8mm
Quantity
3000 units
FDC6020C Rev B(W)
Typical Characteristics : Q1
20
VGS = -4.5V
-3.5V
16
12
-3.0V
-2.5V
8
-2.0V
4
0
0123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics.
1.3
ID = -4.2A
VGS = -4.5V
1.2
1.1
1
0.9
0.8
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = -5V
16
TA = -55oC
25oC
12
125oC
8
4
0
0.5
1 1.5 2 2.5 3
-VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS= -2.0V
-2.5V
-3.0V
-3.5V
4 8 12
-ID, DRAIN CURRENT (A)
-4.5V
16 20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.16
0.14
ID = -2.1A
0.12
0.1
0.08
0.06
TA = 25oC
TA = 125oC
0.04
1.5
2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
0.0001
0
TA = 125oC
25oC
-55oC
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6020C RevB (W)
4페이지 Typical Characteristics : Q2
5
ID = 5.9A
4
3
VDS = 5V
10V
15V
2
1
0
01234567
Qg, GATE CHARGE (nC)
8
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10 10µs
100µs
1ms
10ms
1
100ms
1s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 102oC/W
TA = 25oC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
1000
900
800
CISS
f = 1MHz
VGS = 0 V
700
600
500
400
COSS
300
200
100
0
0
CRSS
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 18. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 102°C/W
TA = 25°C
6
4
2
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 20. Single Pulse Maximum
Power Dissipation.
1000
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 102 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC6020C RevB (W)
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC6020C | Complementary PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |