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부품번호 | FDC606P 기능 |
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기능 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.5 V
RDS(ON) = 35 mΩ @ VGS = –2.5 V
RDS(ON) = 53 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.606
FDC606P
7’’
Ratings
–12
±8
–6
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
Typical Characteristics
5
ID = -6A
4
VDS = -4V
-8V
3
-6V
2
1
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
25
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
100µs
10
1ms
10ms
100ms
1 1s
DC
VGS = -4.5V
SINGLE PULSE
0.1 RθJA = 156oC/W
TA = 25oC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2500
2000
CISS
f = 1 MHz
VGS = 0 V
1500
1000
COSS
500
CRSS
0
0 3 6 9 12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
8
RθJA = 156°C/W
TA = 25°C
6
4
2
0
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 156oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC606P Rev E (W)
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC606P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |